The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Nov. 28, 2017
Applicant:
Facebook Technologies, Llc, Menlo Park, CA (US);
Inventors:
Assignee:
Facebook Technologies, LLC, Menlo Park, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 3/00 (2006.01); H01L 21/265 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
G02B 3/0087 (2013.01); H01L 21/2654 (2013.01); H01L 33/32 (2013.01); G02B 2003/0093 (2013.01);
Abstract
A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.