The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Dec. 08, 2016
Applicant:
Ramot AT Tel-aviv University Ltd., Tel-Aviv, IL;
Inventors:
Fernando Patolsky, Rehovot, IL;
Vadim Krivitsky, Bney-Ayish, IL;
Marina Zverzhinetsky, Rishon-LeZion, IL;
Assignee:
Ramot at Tel-Aviv University Ltd., Tel-Aviv, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61B 5/1473 (2006.01); G01N 33/50 (2006.01); G01N 27/414 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); A61B 5/00 (2006.01); H01L 29/16 (2006.01); B82Y 15/00 (2011.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
G01N 33/5005 (2013.01); A61B 5/1473 (2013.01); A61B 5/4866 (2013.01); A61B 5/6833 (2013.01); A61B 5/6847 (2013.01); G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); H01L 23/532 (2013.01); H01L 29/06 (2013.01); H01L 29/0673 (2013.01); H01L 29/16 (2013.01); B82Y 15/00 (2013.01); H01L 51/0049 (2013.01); H01L 51/0545 (2013.01); H01L 51/0558 (2013.01);
Abstract
A sensing element comprises a transistor having a gate electrode, a source electrode, a gate electrode and a semiconductor nanostructure connecting between the source and the gate electrodes. The semiconductor nanostructure is modified by a functional moiety covalently attached thereto. A voltage source is connected to the gate electrode. A controller controls a gate voltage applied by the voltage source to the gate electrode such as to reverse a redox reaction occurring when the moiety contacts a redox reactive agent.