The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Dec. 25, 2019
Semitronix Corporation, Hangzhou, CN;
Zhong Tang, Hangzhou, CN;
Zheng Shi, Hangzhou, CN;
Weiwei Pan, Hangzhou, CN;
Zhenyan Huang, Hangzhou, CN;
Semitronix Corporation, Hangzhou, CN;
Abstract
A temperature sensor includes a NAND gate and a plurality of delay units. The NAND gate includes a first and a second input terminals, and an output terminal. The first input terminal is configured to receive an external starting control signal. The plurality of delay units are connected in series. An input end of the first delay unit is connected to the output terminal of the NAND gate. An output end of the last delay unit is connected to the second input terminal of the NAND gate, thereby forming a ring oscillator structure. The temperature sensor can realize conversion of temperature-leakage-frequency based on the ring oscillator structure in a temperature range of −40˜125° C., thereby simplifying design complexity and achieves high accuracy.