The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Sep. 29, 2020
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Kuo-Wei Huang, Yunlin County, TW;

Yung-Liang Tung, Hsinchu County, TW;

Shih-Hsiung Wu, Tainan, TW;

Jen-An Chen, Miaoli County, TW;

Pei-Ting Chiu, Kaohsiung, TW;

Yu-Hung Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); B05D 3/06 (2006.01); B05D 3/02 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0004 (2013.01); B05D 3/0218 (2013.01); B05D 3/067 (2013.01); H01L 51/0026 (2013.01); H01L 51/42 (2013.01); H01L 2251/10 (2013.01); H01L 2251/30 (2013.01);
Abstract

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.(RNH)MAMX  formula (1),


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