The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Mar. 09, 2020
Applicant:
Array Photonics, Inc., Tempe, AZ (US);
Inventors:
Radek Roucka, East Palo Alto, CA (US);
Sabeur Siala, Sunnyvale, CA (US);
Aymeric Maros, San Francisco, CA (US);
Ting Liu, San Jose, CA (US);
Ferran Suarez, Chandler, AZ (US);
Evan Pickett, Menlo Park, CA (US);
Assignee:
ARRAY PHOTONICS, INC., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 27/144 (2006.01); H01L 31/18 (2006.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 31/03046 (2013.01); H01L 27/1446 (2013.01); H01L 31/1844 (2013.01); H01L 33/30 (2013.01);
Abstract
Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.