The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Jul. 28, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Daisuke Shinohara, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor part having a recess formed in an upper surface thereof, an insulating member provided in a portion of the recess, a first electrode, a gate insulating film thinner than the insulating member. The first electrode includes a first part provided in another portion of the recess, and a second part provided higher than the insulating member. The gate insulating film is provided between the semiconductor part and the first part. The semiconductor part includes a first layer of a first conductivity type contacting the gate insulating film, second and third layers of a second conductivity type contacting the first layer and being connected to a source contact and a drain contact. The recess is positioned between the source contact and the drain contact when viewed from above. The insulating member is provided between the first part and the third layer.