The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Apr. 11, 2018
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Shota Morisaki, Chiyoda-ku, JP;

Yoshiko Tamada, Chiyoda-ku, JP;

Junichi Nakashima, Chiyoda-ku, JP;

Daisuke Oya, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/108 (2006.01); H02M 7/48 (2007.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/301 (2013.01); H01L 27/10867 (2013.01); H01L 27/302 (2013.01); H01L 29/7393 (2013.01); H01L 29/7394 (2013.01); H01L 29/7395 (2013.01); H01L 29/7398 (2013.01); H02M 7/48 (2013.01);
Abstract

An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.


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