The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Sep. 22, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Myoungsu Son, Yongin-si, KR;
Seung Pil Ko, Hwaseong-si, KR;
Jung Hyuk Lee, Hwaseong-si, KR;
Shinhee Han, Seongnam-si, KR;
Gwan-Hyeob Koh, Seoul, KR;
Yoonjong Song, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.