The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Feb. 11, 2019
Applicant:
Trieye Ltd., Tel-Aviv, IL;
Inventors:
Uriel Levy, Kiryat Ono, IL;
Omer Kapach, Jerusalem, IL;
Avraham Bakal, Tel-Aviv, IL;
Assaf Lahav, Binyamina, IL;
Edward Preisler, San Clemente, CA (US);
Assignee:
TriEye Ltd., Tel Aviv, IL;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1465 (2013.01); H01L 27/1462 (2013.01); H01L 27/1469 (2013.01); H01L 27/14627 (2013.01); H01L 31/1808 (2013.01); H01L 31/1892 (2013.01);
Abstract
Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.