The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jul. 02, 2020
Applicant:

Government of the United States of America, As Represented BY the Secretary of Commerce, Gaithersburg, MD (US);

Inventor:

Eric John Stanton, Boulder, CO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/103 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14625 (2013.01); H01L 27/14669 (2013.01); H01L 31/02327 (2013.01); H01L 31/035218 (2013.01);
Abstract

A quantum waveguide infrared photodetector includes: a photon absorption layer that receives infrared photons propagating longitudinally along a longitudinal length of the photon absorption layer, converts the infrared photons into electrons, and communicates the electrons to a conductor layer; a first conductor layer that receives a first electrical potential; and a second conductor layer that receives a second electrical potential, wherein electrons produced by the photon absorption layer are communicated from the photon absorption layer: to the first conductor layer when the first electrical potential is more positive than the second electrical potential, and to the second conductor layer when the second electrical potential is more positive than the first electrical potential, an electrical current produced by the electrons is proportional to an amount of absorption of the infrared photons in the photon absorption layer.


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