The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jul. 28, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonhyuk Hong, Seoul, KR;

Jongjin Lee, Seoul, KR;

Rakhwan Kim, Suwon-si, KR;

Eun-Ji Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76849 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 21/823431 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 21/823821 (2013.01);
Abstract

A semiconductor device includes transistors on a substrate, a first interlayered insulating layer on the transistors, first and second lower interconnection lines in an upper portion of the first interlayered insulating layer, and first and second vias on the first and second lower interconnection lines, respectively. Each of the first and second lower interconnection lines includes a first metal pattern. The first lower interconnection line further includes a second metal pattern, on the first metal pattern with a metallic material different from the first metal pattern. The second metal pattern is absent in the second lower interconnection line. The second via includes first and second portions, which are in contact with respective top surfaces of the first interlayered insulating layer and the second lower interconnection line, and the lowest level of a bottom surface of the second portion is lower than that of a bottom surface of the first via.


Find Patent Forward Citations

Loading…