The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Aug. 21, 2020
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/15 (2006.01); H01L 29/267 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76256 (2013.01); H01L 21/7624 (2013.01); H01L 21/76251 (2013.01); H01L 23/373 (2013.01); H01L 23/3738 (2013.01); H01L 29/151 (2013.01); H01L 29/267 (2013.01); H01L 2224/80097 (2013.01);
Abstract
A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.