The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Nov. 29, 2018
The Regents of the University of Michigan, Ann Arbor, MI (US);
Zhengya Zhang, Ann Arbor, MI (US);
Thomas Chen, Ann Arbor, MI (US);
Jacob Christopher Botimer, Ann Arbor, MI (US);
Shiming Song, Ann Arbor, MI (US);
The Regents of the University of Michigan, Ann Arbor, MI (US);
Abstract
Many signal processing, machine learning and scientific computing applications require a large number of multiply-accumulate (MAC) operations. This type of operation is demanding in both computation and memory. Process in memory has been proposed as a new technique that computes directly on a large array of data in place, to eliminate expensive data movement overhead. To enable parallel multi-bit MAC operations, both width- and level-modulating memory word lines are applied. To improve performance and provide tolerance against process-voltage-temperature variations, a delay-locked loop is used to generate fine unit pulses for driving memory word lines and a dual-ramp Single-slope ADC is used to convert bit line outputs. The concept is prototyped in a 180 nm CMOS test chip made of four 320×64 compute-SRAMs, each supporting 128× parallel 5 b×5 b MACs with 32 5 b output ADCs and consuming 16.6 mW at 200 MHz.