The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Nov. 06, 2019
Applicant:

Vanguard International Semiconductor Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ranganathan Nagarajan, Singapore, SG;

Jia Jie Xia, Singapore, SG;

Rakesh Kumar, Singapore, SG;

Bevita Kallupalathinkal Chandran, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0081 (2013.01); B81C 1/0069 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0307 (2013.01); B81C 2201/0105 (2013.01);
Abstract

In a non-limiting embodiment, a MEMS device may include a substrate having a device stopper. The device stopper may be integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may extend through the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be arranged over the thermal dielectric isolation layer and the device cavity.


Find Patent Forward Citations

Loading…