The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Apr. 27, 2020
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Takuya Ishii, Osaka, JP;

Tetsuya Mihashi, Kyoto, JP;

Ginga Katase, Kyoto, JP;

Takashi Ryu, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/32 (2007.01); H02H 7/20 (2006.01); H02H 3/20 (2006.01); H02H 1/00 (2006.01); H02H 9/02 (2006.01); H02H 3/08 (2006.01); G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
H02M 1/32 (2013.01); H02H 1/00 (2013.01); H02H 3/20 (2013.01); H02H 7/20 (2013.01); G05F 1/10 (2013.01); H02H 3/08 (2013.01); H02H 9/02 (2013.01);
Abstract

A power supply protection circuit is a circuit that controls a protection switch provided on a power supply line connecting a direct current power supply and a load circuit. The power supply protection circuit includes: circuitry connected to the protection switch; and a controller that switches an operation state of the circuitry between a first state and a second state. The first state is an operation state in which driving of the protection switch is enabled when the protection switch is a first semiconductor switch having a control terminal connected to a semiconductor layer of a first conductivity type. The second state is an operation state in which driving of the protection switch is enabled when the protection switch is a second semiconductor switch having a control terminal connected to a semiconductor layer of a second conductivity type that is different from the semiconductor layer of a first conductivity type.


Find Patent Forward Citations

Loading…