The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Dec. 28, 2018
Applicant:
Soft-epi Inc., Gyeonggi-do, KR;
Inventors:
Sung Min Hwang, Gyeonggi-do, KR;
In Sung Cho, Gyeonggi-do, KR;
Won Taeg Lim, Gyeonggi-do, KR;
Doo Soo Kim, Gyeonggi-do, KR;
Assignee:
Soft-Epi Inc., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 2933/0091 (2013.01);
Abstract
Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlGaN (0<x≤1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlGaN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.