The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Dec. 12, 2018
Emberion Oy, Espoo, FI;
EMBERION OY, Espoo, FI;
Abstract
A photosensitive field-effect transistor which can be configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The field-effect transistor has a channel () made from a two-dimensional material and comprises a photoactive layer () which can be configured to donate charge carriers to the transistor channel () when electromagnetic radiation is absorbed in the photoactive layer (). The photosensitive field-effect transistor comprises a top electrode () which is in contact with the photoactive layer on one or more contact areas which together form a contact pattern. With a suitably patterned top electrode (), a voltage applied to the electrode can function as an electrical shutter which can switch the photosensitive field-effect transistor between a light-sensitive state and a light-immune state.