The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Nov. 08, 2019
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Inventor:
Fangmei Liu, Shenzhen, CN;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 27/3262 (2013.01);
Abstract
The present disclosure provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a light shielding layer, an intermediate buffer layer, and a buffer layer, wherein the light shielding layer is formed on the substrate, the buffer layer is located above the substrate and the light shielding layer, the intermediate buffer layer is formed between the buffer layer and the light shielding layer, and the intermediate buffer layer is made of ceramic material.