The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Dec. 12, 2017
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Xiaolong He, Beijing, CN;
Dongsheng Li, Beijing, CN;
Shengguang Ban, Beijing, CN;
Rui Huang, Beijing, CN;
Dongcan Mi, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/267 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/4763 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); H01L 29/267 (2013.01); H01L 29/45 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 21/47635 (2013.01); H01L 27/1225 (2013.01);
Abstract
A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.