The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Nov. 13, 2017
Applicant:
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Inventor:
Shunichi Nakamura, Saitama, JP;
Assignee:
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/402 (2013.01); H01L 29/41741 (2013.01); H01L 29/4916 (2013.01); H01L 29/66068 (2013.01);
Abstract
A wide gap semiconductor device has: a drift layerusing wide gap semiconductor material being a first conductivity type; a plurality of well regionsbeing a second conductivity type and formed in the drift layer; a polysilicon layerprovided on the well regionsand on the drift layerbetween the well regions; an interlayer insulating filmprovided on the polysilicon layer; a gate padprovided on the interlayer insulating film; and a source padelectrically connected to the polysilicon layer