The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Oct. 05, 2020
Mqsemi Ag, Zug, CH;
Munaf Rahimo, Gaensbrunnen, CH;
Iulian Nistor, Niederweningen, CH;
MQ SEMI AG, Zug, CH;
Abstract
A Metal Oxide Semiconductor (MOS) trench cell includes a plurality of main gate trenches etched in the semiconductor body. In conduction state, the main gate electrode forms vertical MOS channels on the short edges and at least on a portion of the long edges in a mesa of the semiconductor body between neighbouring trenches. The longitudinal direction of the main gate trenches is oriented at an angle between 45 degrees to 90 degrees compared to the longitudinal direction of the first main electrode contacts, in a top plane view. This design offers a wide range of advantages both in terms of performance (reduced losses, improved controllability and reliability) and processability (narrow mesa design rules) and can be applied to both IGBTs and MOSFETs based on silicon or wide bandgap materials such as silicon carbide SiC, zinc oxide (ZnO), gallium oxide (Ga2O3), gallium nitride (GaN), diamond.