The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Jun. 18, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Toshiya Saitoh, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); H01L 21/0217 (2013.01); H01L 21/0273 (2013.01); H01L 21/02118 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 29/40117 (2019.08); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A method of manufacturing a split-gate type nonvolatile memory improving reliability and manufacturing yield. In a method of manufacturing a split-gate type nonvolatile memory in which a memory gate electrode is formed prior to a control gate electrode, a protective film is formed to cover the gate insulating film exposed between control gate electrodes before unnecessary control gate electrodes are removed.