The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Feb. 26, 2020
Applicant:
Tamura Corporation, Tokyo, JP;
Inventors:
Masaru Takizawa, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
Assignee:
TAMURA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/267 (2006.01); H01L 29/47 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 29/0619 (2013.01); H01L 29/0661 (2013.01); H01L 29/267 (2013.01); H01L 29/66969 (2013.01); H01L 29/872 (2013.01); H01L 29/47 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer including a GaO-based single crystal, and an electrode that is in contact with a surface of the semiconductor layer. The semiconductor layer is in Schottky-contact with the electrode and has an electron carrier concentration based on reverse withstand voltage and electric field-breakdown strength of the GaO-based single crystal.