The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Jun. 03, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Szu-Yao Chang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10817 (2013.01); H01L 27/10855 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01); H01L 29/945 (2013.01);
Abstract

The stack capacitor structure includes a substrate, first, second, third, and fourth support layers, first, second, and third insulating layers, first, second, and third holes, and a capacitor. The first support layer is disposed over the substrate. The first insulating layer is disposed on the first support layer. The second support layer is disposed on the first insulating layer. The third support layer is disposed on the second support layer. The second insulating layer is disposed on the third support layer. The third insulating layer is disposed on the second insulating layer. The fourth support layer is disposed on the third insulating layer. The first hole penetrates through from the second support layer to the first support layer. The second and third holes penetrate through from the fourth support layer to the third support layer. The capacitor is disposed in the first, second, and third holes.


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