The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Oct. 27, 2020
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Martin O'Toole, Overijse, BE;

Zsolt Tokei, Leuven, BE;

Christopher Wilson, Tervuren, BE;

Stefan Decoster, Bertem, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0337 (2013.01); H01L 21/76877 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01);
Abstract

A method is provided for producing electrically conductive lines (), wherein spacers are deposited on a sacrificial structure present on a stack of layers, including a hardmask layer on top of a dielectric layer into which the lines are to be embedded, and an intermediate layer on top of the hardmask layer. A self-aligned litho-etch step is then performed to create an opening in the intermediate layer, the opening being self-aligned to the space between two adjacent sidewalls of the sacrificial structure. This self-aligned step precedes the deposition of spacers on the sacrificial structure, so that spacers are also formed on the transverse sidewalls of the opening, i.e. perpendicular to the spacers on the walls of the sacrificial structure. A blocking material is provided in the area of the bottom of the opening that is surrounded on all sides by spacers, thereby creating a block with a reduced size.


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