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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11264244 B1

PDFFull Text
Date of Patent:
Mar. 01, 2022

Filed:

Feb. 18, 2020

Method of manufacturing semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Tatsuyoshi Mihara, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Stanetta D Isaac

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/76243 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/45 (2013.01); H01L 29/66492 (2013.01); H01L 29/66537 (2013.01); H01L 29/7833 (2013.01);
Abstract

After a MISFET is formed on a substrate including a semiconductor substrate, an insulating layer and a semiconductor layer, an interlayer insulating film and a first insulating film are formed on the substrate. Also, after an opening is formed in each of the first insulating film and the interlayer insulating film, a second insulating film is formed at each of a bottom portion of the opening and a side surface of the opening and also formed on an upper surface of the first insulating film. Further, each of the second insulating film formed at the bottom portion of the opening and the second insulating film formed on the upper surface of the first insulating film is removed by etching. After that, an inside of the opening is etched under a condition that each of the first insulating film and the second insulating film is less etched than the insulating layer.

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