The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Sep. 13, 2017
Applicants:

Hokuriku Seikei Industrial Co., Ltd., Ishikawa, JP;

Tohoku University, Miyagi, JP;

Inventors:

Tomohisa Suzuki, Ishikawa, JP;

Michito Miyahara, Fukuoka, JP;

Masaru Sasaki, Ishikawa, JP;

Assignees:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/32 (2006.01); H01L 21/687 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32467 (2013.01); C23C 16/325 (2013.01); H01J 37/32495 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01); H01L 21/68735 (2013.01); H01L 21/68757 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 μm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a BC sintering aid, or with a sintering aid comprising AlOand YOwith total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.


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