The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Aug. 14, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Kazuharu Yamabe, Yokkaichi, JP;

Yoichi Minemura, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes first and second memory cells, first and second word lines, and a bit line. The first and second memory cells are coupled to each other and adjacent to each other. When a state of the second memory cell is the first state or one of the states corresponding to a lower threshold voltage distribution than that of the first state, the first memory cell data is read in a first period during which a first voltage is applied to the second word line. And when the state of the second memory cell is the second state or one of the states corresponding to a higher threshold voltage distribution than the second state, the first memory cell data is read in a second period during which a second voltage higher than the first voltage is applied to the second word line.


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