The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Apr. 10, 2020
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Yoshisato Yokoyama, Tokyo, JP;

Makoto Yabuuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/418 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/418 (2013.01); G11C 11/419 (2013.01);
Abstract

A semiconductor device includes a first wiring having a first portion, a second portion, a third portion provided between the first portion and the second portion, memory cells connected to the third portion of the first wiring, a field effect transistor having a drain connected to the second portion, and a gate, and a second wiring provided in parallel with the first wiring. The third portion of the first wiring includes a fourth portion located nearest to the first portion and a fifth portion located nearest to the second portion. The first wiring further includes a sixth portion disposed between the first portion and the fourth portion. The memory cells include a first memory cell connected to the fourth portion and a second memory cell connected to the fifth portion. The second wiring is electrically connected between the sixth portion and the gate of the field effect transistor.


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