The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Mar. 18, 2020
Applicant:
Asm Korea Ltd., Gyeonggi-do, KR;
Inventors:
Assignee:
ASM KOREA LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/762 (2006.01); H01L 23/535 (2006.01); H01L 23/64 (2006.01); C04B 35/14 (2006.01); C01B 33/113 (2006.01);
U.S. Cl.
CPC ...
C23C 16/402 (2013.01); C01B 33/113 (2013.01); C04B 35/14 (2013.01); C23C 16/45542 (2013.01); H01L 21/76229 (2013.01); H01L 23/535 (2013.01); H01L 23/647 (2013.01); Y10T 428/31504 (2015.04);
Abstract
Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.