The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Mar. 27, 2020
Applicant:
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Inventors:
Longqi Wang, Hangzhou, CN;
Jianxin Wang, Hangzhou, CN;
Assignee:
Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/156 (2006.01); H02M 1/12 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/12 (2013.01); H02M 3/156 (2013.01); H02M 1/0009 (2021.05);
Abstract
A method of reducing THD can include: acquiring a first average inductor current during a first conduction time of a main power transistor of a power converter in a switching cycle; acquiring a second average inductor current during a second conduction time and an off time of the main power transistor in the switching cycle; and adjusting the second conduction time of the main power transistor in accordance with a difference between the first and second average inductor currents, where the first and second conduction times are successive.