The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Aug. 31, 2018
Dow Corning Toray Co., Ltd., Tokyo, JP;
Dow Silicones Corporation, Midland, MI (US);
DuPont Toray Specialty Materials Kabushiki Kaisha, Tokyo, JP;
Dow Silicones Corporation, Midland, MI (US);
Abstract
A method for producing a sealed optical semiconductor device includes: placing inner and outermost layer sealing films on a substrate on which an optical semiconductor element is mounted within a pressure reduction chamber, and reducing the pressure; a step in which the outermost film is heated, and at least the periphery of the outermost film is thermally fused to the surface of the substrate; and a step in which the reduction of pressure is released, and the substrate is sealed by the outermost film and the inner film. The temperature Tof the substrate when the reduction of pressure is released is a temperature at which the outermost film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 200-450%. The inner film exhibits a loss tangent (tan δ) of 1.6 or more at the temperature T.