The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Apr. 10, 2019
Glo Ab, Lund, SE;
Richard P. Schneider, Jr., Albuquerque, NM (US);
Benjamin Leung, Sunnyvale, CA (US);
Fariba Danesh, Los Altos Hills, CA (US);
Zulal Tezcan Ozel, Fremont, CA (US);
Miao-Chan Tsai, Sunnyvale, CA (US);
NANOSYS, INC., Milpitas, CA (US);
Abstract
A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.