The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Mar. 03, 2021
Diffusion based ex-situ group v (p, as, sb, bi) doping in polycrystalline cdte thin film solar cells
The Board of Trustees of the University of Alabama, Tuscaloosa, AL (US);
The University of Toledo, Toledo, OH (US);
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA, Tuscaloosa, AL (US);
The University of Toledo, Toledo, OH (US);
Abstract
Described herein is a diffusion-based ex-situ group V element doping method in the CdClheat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl, AsCl, SbCl, or BiCl, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>10cm. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.