The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Oct. 23, 2018
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Cosimo Gerardi, Motta S.Anastasia, IT;
Cristina Tringali, Augusta, IT;
Sebastiano Ravesi, Catania, IT;
Marina Foti, Catania, IT;
NoemiGraziana Sparta', Catania, IT;
Corrado Accardi, Ragusa, IT;
Stella Loverso, Catania, IT;
STMICROELECTRONICS S.R.L., Agrate Brianza, IT;
Abstract
A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.