The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Jul. 01, 2019
Applicant:

Epir Technologies, Inc., Bolingbrook, IL (US);

Inventors:

Sivalingam Sivananthan, Naperville, IL (US);

Michael Carmody, Western Springs, IL (US);

Robert W. Bower, Anacortes, WA (US);

Shubhrangshu Mallick, Romeoville, IL (US);

James Garland, Aurora, IL (US);

Assignee:

EPIR Technologies, Inc., Bolingbrook, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/074 (2012.01); H01L 31/0687 (2012.01); H01L 29/267 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 29/267 (2013.01); H01L 31/0687 (2013.01); H01L 31/074 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01); Y02E 10/543 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method for passing photovoltaic current between a subcell formed from a single crystal Group ll-VI semiconductor material and a subcell formed from a single crystal Group IV semiconductor material, includes the steps of forming a first subcell by an epitaxial growth process, the first subcell having a first upper surface; forming a tunnel heterojunction between the first subcell and the second subcell, and tunneling carriers formed by light incident on the first and second subcells through the tunnel heterojunction, thereby permitting a photoelectric series current to flow through the first and second subcells.


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