The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Jul. 03, 2018
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Qinghe Wang, Beijing, CN;
Luke Ding, Beijing, CN;
Leilei Cheng, Beijing, CN;
Jun Bao, Beijing, CN;
Tongshang Su, Beijing, CN;
Dongfang Wang, Beijing, CN;
Guangcai Yuan, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Abstract
The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.