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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11257944 B1

PDFFull Text
Date of Patent:
Feb. 22, 2022

Filed:

Apr. 22, 2016

Semiconductor device and semiconductor device manufacturing method

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Shigenari Okada, Kyoto, JP;

Masaki Nagata, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Samuel A Gebremariam

Assistant Examiner:

Jonas T Beardsley

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 21/28 (2006.01); H01L 27/02 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/28114 (2013.01); H01L 21/28194 (2013.01); H01L 21/28211 (2013.01); H01L 21/28229 (2013.01); H01L 27/0255 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 21/28035 (2013.01); H01L 21/28238 (2013.01); H01L 27/0629 (2013.01); H01L 29/42376 (2013.01); H01L 29/7804 (2013.01); H01L 29/7808 (2013.01);
Abstract

A semiconductor device according to the present invention includes a semiconductor layer, a gate trench defined in the semiconductor layer, a first insulating film arranged on the inner surface of the gate trench, a gate electrode arranged in the gate trench via the first insulating film, and a source layer, a body layer, and a drain layer arranged laterally to the gate trench, in which the first insulating film includes, at least at the bottom of the gate trench, a first portion and a second portion with a film elaborateness lower than that of the first portion from the inner surface of the gate trench in the film thickness direction.

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