Gan rectifier suitable for operating under 35ghz alternating-current frequency, and preparation method therefor

Abstract

The present invention discloses a method for preparing a GaN rectifier suitable for operating at an alternating current frequency of 35 GHz: sequentially growing, on a silicon substrate, an N-polar GaN buffer layer, a carbon doped semi-insulated N-polar GaN layer, a non-doped N-polar AlGaN layer, a non-doped N-polar GaN layer and a non-doped N-polar InGaN thin film to obtain a rectifier epitaxial wafer; preparing a pattern groove for a schottky contact electrode on the GaN rectifier epitaxial wafer, and depositing the schottky contact electrode in the groove; preparing a pattern for an ohmic contact electrode, and depositing a device ohmic contact electrode on the surface of the epitaxial wafer; subsequently, depositing a silicon nitride passivation layer at a part where there is no electrode on the surface of the epitaxial wafer, and preparing a surface electrode area; and finally, performing mesa isolation treatment on the GaN rectifier epitaxial wafer. The present invention realizes the preparation of a high-frequency GaN rectifier, and improves the performance stability of a rectifier device operating at a high power.