The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Mar. 19, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Doug Weiser, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0878 (2013.01); H01L 21/26586 (2013.01); H01L 21/823418 (2013.01); H01L 21/823493 (2013.01); H01L 27/088 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 21/2253 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type. First and second wells are located within the substrate, the first well being formed with a dopant of the first conductivity type, e.g. n-type, and the second well formed with a dopant of a second different conductivity type, e.g. p-type. A doped gap region is located between the first and second wells. The doped gap region is formed with a dopant of the second conductivity type, e.g. p-type, at a lower dopant concentration than the dopant concentration in the second well.