The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Jul. 27, 2020
Applicant:
National Chiao Tung University, Hsinchu, TW;
Inventors:
Horng-Chih Lin, Hsinchu, TW;
Yu-An Huang, Hsinchu, TW;
Assignee:
National Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 23/66 (2013.01); H01L 29/42384 (2013.01); H01L 29/66757 (2013.01);
Abstract
A radio frequency integrated circuit includes a silicon CMOS substrate with at least one CMOS device buried therein, and at least one thin film transistor formed on the silicon CMOS substrate and functioning as a radio frequency device. The thin film transistor includes a T-shaped gate electrode. A method for the fabricating a radio frequency integrated circuit is also disclosed.
Quick Actions:
Lin, Horng-Chih. (2022). Radio frequency integrated circuit having relatively small circuit area and method of fabricating the same (U.S. Patent No. 11257845). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11257845
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile