The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Jul. 18, 2018
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Kazuki Tanemura, Kanagawa, JP;
Etsuko Kamata, Kanagawa, JP;
Hiromi Sawai, Kanagawa, JP;
Daisuke Matsubayashi, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a high threshold voltage is provided. A first conductor positioned over a substrate, a first insulator positioned over the first conductor, a first oxide positioned in contact with the top surface of the first insulator, a second insulator positioned in contact with the top surface of the first oxide, a second oxide positioned over the second insulator, a third insulator positioned over the second oxide, and a second conductor positioned over the third insulator are included. A mixed layer is formed between the first insulator and the first oxide. The mixed layer contains at least one of atoms contained in the first insulator and at least one of atoms contained in the first oxide. The mixed layer has fixed negative charge.