The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Apr. 19, 2019
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/32137 (2013.01);
Abstract
The invention has been made in view of the above problems, and provides a plasma processing method capable of preventing etching shape abnormality in a plasma processing method for forming a mask layer of a polysilicon film. The invention relates to a plasma processing method for plasma-etching a polysilicon film, the plasma processing method comprising plasma-etching the polysilicon film using a mixed gas including a halogen gas, a fluorocarbon gas, an oxygen gas, and a carbonyl sulfide gas.