Test circuit, memory device, storage device, and method of operating the same

Abstract

Provided herein may be a test circuit, a memory device, a storage device, and a method of operating the same. The word line test circuit may include an operation signal generator configured to generate a plurality of operation signals in response to a test command, a comparison result generator configured to, in response to the plurality of operation signals, generate a target voltage based on a test current, in which a current of a target word line varying with a test voltage is reflected, and to generate a comparison signal based on a result of a comparison between the target voltage and a reference voltage, and a word line defect detector configured to detect a defect in the target word line based on at least one reference count and a count of a reference clock, cycles of which are counted until a level of the comparison signal changes from a first level to a second level.