The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Feb. 06, 2020
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kazutaka Yamane, Kanagawa, JP;

Hiroyuki Uchida, Kanagawa, JP;

Yutaka Higo, Kanagawa, JP;

Hiroyuki Ohmori, Kanagawa, JP;

Kazuhiro Bessho, Kanagawa, JP;

Masanori Hosomi, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 43/08 (2006.01); G11B 5/39 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01F 10/30 (2006.01); G11C 11/16 (2006.01); H01L 29/82 (2006.01); G11C 11/15 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3909 (2013.01); G11B 5/3912 (2013.01); G11B 5/3967 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01F 10/30 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 27/105 (2013.01); H01L 27/228 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01);
Abstract

The present technology relates to a storage device that realizes both a high information retention property and a low power consumption. A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.


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