The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Feb. 21, 2018
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Yoshinori Hirano, Annaka, JP;
Hideyoshi Yanagisawa, Annaka, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 (2006.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/039 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/36 (2013.01); G03F 7/0392 (2013.01); G03F 7/162 (2013.01); G03F 7/20 (2013.01); G03F 7/38 (2013.01); G03F 7/0397 (2013.01);
Abstract
A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.