The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Oct. 15, 2020
Applicant:
Samsung Sdi Co., Ltd., Yongin-si, KR;
Inventors:
Jung Min Choi, Suwon-si, KR;
Jun Young Jang, Suwon-si, KR;
Hyun Jung Kim, Suwon-si, KR;
Hyung Rang Moon, Suwon-si, KR;
Ji Hye Lee, Suwon-si, KR;
Kwen Woo Han, Suwon-si, KR;
Ki Wook Hwang, Suwon-si, KR;
Assignee:
SAMSUNG SDI CO., LTD., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01); C09G 1/06 (2006.01); C09K 3/14 (2006.01); C09G 1/04 (2006.01); C09G 1/00 (2006.01); C09G 1/02 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); C09G 1/00 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); H01L 21/0217 (2013.01); H01L 21/02019 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01);
Abstract
An etching composition for silicon nitride layers and a method of etching a silicon nitride layer using the composition, the etching composition including an inorganic acid or a salt thereof; a solvent; an acid-modified silica or an acid-modified silicic acid; and a cyclic compound containing four or more nitrogen atoms.