The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Feb. 07, 2020
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Masaaki Hirakawa, Yokohama, JP;

Ikuo Uematsu, Yokohama, JP;

Takahiro Kanai, Kamakura, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); H01L 21/306 (2006.01); C09K 13/10 (2006.01); C09K 13/08 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C23F 1/14 (2006.01); C23F 1/10 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); C09K 13/08 (2013.01); C09K 13/10 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/30617 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); C23F 1/10 (2013.01); C23F 1/14 (2013.01);
Abstract

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.


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