The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Mar. 04, 2018
Applicants:

Kris Vossough, Palo Alto, CA (US);

Farhang Yazdani, San Jose, CA (US);

Inventors:

Kris Vossough, Palo Alto, CA (US);

Farhang Yazdani, San Jose, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 15/12 (2006.01); B81B 3/00 (2006.01); G01P 15/08 (2006.01); G01L 9/00 (2006.01); G01N 33/00 (2006.01); H01L 29/06 (2006.01); H01L 29/84 (2006.01); H04R 19/04 (2006.01); H04R 19/00 (2006.01); G01C 19/5712 (2012.01); H04R 23/00 (2006.01); G01C 19/5783 (2012.01); B82Y 15/00 (2011.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 51/00 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0021 (2013.01); B82Y 15/00 (2013.01); G01C 19/5712 (2013.01); G01C 19/5783 (2013.01); G01L 9/0042 (2013.01); G01N 33/0027 (2013.01); G01P 15/0802 (2013.01); G01P 15/124 (2013.01); H01L 29/0669 (2013.01); H01L 29/84 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); H04R 23/006 (2013.01); B81B 2201/0214 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0127 (2013.01); H01L 29/0673 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/775 (2013.01); H01L 51/0048 (2013.01); H04R 2201/003 (2013.01);
Abstract

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.


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