The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jan. 30, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Vadim Valerievich Ivanov, Dallas, TX (US);

Srinivas Kumar Pulijala, Tucson, AZ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45076 (2013.01); H03F 2200/375 (2013.01);
Abstract

An apparatus has four transistors. The first and third transistors each have a gate coupled to a first input terminal and second input terminal respectively, a source coupled to a current source and to a first terminal of a bias voltage source, and a substrate coupled to a second terminal of the bias voltage source. The second and fourth transistors each have a gate coupled to the first input terminal and the second input terminal respectively, a source coupled to the drain of the first and third transistors respectively, a drain coupled to a lower voltage supply and a substrate coupled to its source. The bias voltage source increases the threshold voltages of the first and third transistors above the second and fourth transistors, respectively. This ensures that the first and third transistors turn on after the second and fourth transistors, respectively.


Find Patent Forward Citations

Loading…